| Onderdeel nummer : | 2SK3565(Q,M) |
|---|---|
| Fabrikant / Merk : | Toshiba Semiconductor and Storage |
| Beschrijving : | MOSFET N-CH 900V 5A TO-220SIS |
| RoHs-status : | Loodvrij / RoHS-conform |
| hoeveelheid beschikbaar | 4923 pcs |
| Datasheets | 1.2SK3565(Q,M).pdf2.2SK3565(Q,M).pdf |
| VGS (th) (Max) @ Id | 4V @ 1mA |
| Vgs (Max) | ±30V |
| Technologie | MOSFET (Metal Oxide) |
| Leverancier Device Pakket | TO-220SIS |
| Serie | π-MOSIV |
| Rds On (Max) @ Id, VGS | 2.5 Ohm @ 3A, 10V |
| Vermogensverlies (Max) | 45W (Tc) |
| Packaging | Tube |
| Verpakking / doos | TO-220-3 Full Pack |
| Andere namen | 2SK3565(Q) 2SK3565(Q)-ND 2SK3565Q 2SK3565Q-ND 2SK3565QM |
| Temperatuur | 150°C (TJ) |
| montage Type | Through Hole |
| Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
| Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Aandrijfspanning (Max. Rds Aan, Min. Rds Aan) | 10V |
| Drain naar de Bron Voltage (Vdss) | 900V |
| gedetailleerde beschrijving | N-Channel 900V 5A (Ta) 45W (Tc) Through Hole TO-220SIS |
| Current - Continuous Drain (Id) @ 25 ° C | 5A (Ta) |
Toshiba Semiconductor and Storage
