Onderdeel nummer : | BUK9E4R9-60E,127 |
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Fabrikant / Merk : | NXP Semiconductors / Freescale |
Beschrijving : | MOSFET N-CH 60V 100A I2PAK |
RoHs-status : | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 4946 pcs |
Datasheets | |
VGS (th) (Max) @ Id | 2.1V @ 1mA |
Vgs (Max) | ±10V |
Technologie | MOSFET (Metal Oxide) |
Leverancier Device Pakket | I2PAK |
Serie | TrenchMOS™ |
Rds On (Max) @ Id, VGS | 4.5 mOhm @ 25A, 10V |
Vermogensverlies (Max) | 234W (Tc) |
Packaging | Tube |
Verpakking / doos | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andere namen | 568-9876-5 934066657127 BUK9E4R960E127 |
Temperatuur | -55°C ~ 175°C (TJ) |
montage Type | Through Hole |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 9710pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan) | 5V, 10V |
Drain naar de Bron Voltage (Vdss) | 60V |
gedetailleerde beschrijving | N-Channel 60V 100A (Tc) 234W (Tc) Through Hole I2PAK |
Current - Continuous Drain (Id) @ 25 ° C | 100A (Tc) |