Onderdeel nummer : |
EMD59T2R |
Fabrikant / Merk : |
LAPIS Semiconductor |
Beschrijving : |
TRANS NPN/PNP PREBIAS 0.15W EMT6 |
RoHs-status : |
Loodvrij / RoHS-conform |
hoeveelheid beschikbaar |
706511 pcs |
Datasheets |
1.EMD59T2R.pdf2.EMD59T2R.pdf |
Spanning - Collector Emitter Breakdown (Max) |
50V |
Vce Saturation (Max) @ Ib, Ic |
150mV @ 500µA, 5mA |
transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
Leverancier Device Pakket |
EMT6 |
Serie |
- |
Weerstand - emitterbasis (R2) |
47 kOhms |
Weerstand - basis (R1) |
10 kOhms |
Vermogen - Max |
150mW |
Packaging |
Tape & Reel (TR) |
Verpakking / doos |
SOT-563, SOT-666 |
Andere namen |
EMD59T2RTR |
montage Type |
Surface Mount |
Vochtgevoeligheidsniveau (MSL) |
1 (Unlimited) |
Fabrikant Standaard Levertijd |
10 Weeks |
Loodvrije status / RoHS-status |
Lead free / RoHS Compliant |
Frequentie - Transition |
250MHz |
gedetailleerde beschrijving |
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 5mA, 10V |
Current - Collector Cutoff (Max) |
500nA |
Current - Collector (Ic) (Max) |
100mA |