Onderdeel nummer : | EMH1T2R |
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Fabrikant / Merk : | LAPIS Semiconductor |
Beschrijving : | TRANS 2NPN PREBIAS 0.15W EMT6 |
RoHs-status : | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 485924 pcs |
Datasheets | 1.EMH1T2R.pdf2.EMH1T2R.pdf |
Spanning - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
transistor Type | 2 NPN - Pre-Biased (Dual) |
Leverancier Device Pakket | EMT6 |
Serie | - |
Weerstand - emitterbasis (R2) | 22 kOhms |
Weerstand - basis (R1) | 22 kOhms |
Vermogen - Max | 150mW |
Packaging | Tape & Reel (TR) |
Verpakking / doos | SOT-563, SOT-666 |
Andere namen | EMH1T2R-ND EMH1T2RTR |
montage Type | Surface Mount |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Fabrikant Standaard Levertijd | 10 Weeks |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Frequentie - Transition | 250MHz |
gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | *MH1 |