Onderdeel nummer : |
EPC2101 |
Fabrikant / Merk : |
EPC |
Beschrijving : |
TRANS GAN ASYMMETRICAL HALF BRID |
RoHs-status : |
Loodvrij / RoHS-conform |
hoeveelheid beschikbaar |
6393 pcs |
Datasheets |
EPC2101.pdf |
VGS (th) (Max) @ Id |
2.5V @ 3mA, 2.5V @ 12mA |
Leverancier Device Pakket |
Die |
Serie |
eGaN® |
Rds On (Max) @ Id, VGS |
11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V |
Vermogen - Max |
- |
Packaging |
Tape & Reel (TR) |
Verpakking / doos |
Die |
Andere namen |
917-1181-2 |
Temperatuur |
-40°C ~ 150°C (TJ) |
montage Type |
Surface Mount |
Vochtgevoeligheidsniveau (MSL) |
1 (Unlimited) |
Fabrikant Standaard Levertijd |
14 Weeks |
Loodvrije status / RoHS-status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 30V, 1200pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
2.7nC @ 5V, 12nC @ 5V |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain naar de Bron Voltage (Vdss) |
60V |
gedetailleerde beschrijving |
Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die |
Current - Continuous Drain (Id) @ 25 ° C |
9.5A, 38A |