Onderdeel nummer : |
EPC2107ENGRT |
Fabrikant / Merk : |
EPC |
Beschrijving : |
TRANS GAN 3N-CH 100V BUMPED DIE |
RoHs-status : |
Loodvrij / RoHS-conform |
hoeveelheid beschikbaar |
33224 pcs |
Datasheets |
EPC2107ENGRT.pdf |
VGS (th) (Max) @ Id |
2.5V @ 100µA, 2.5V @ 20µA |
Leverancier Device Pakket |
9-BGA (1.35x1.35) |
Serie |
eGaN® |
Rds On (Max) @ Id, VGS |
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Vermogen - Max |
- |
Packaging |
Tape & Reel (TR) |
Verpakking / doos |
9-VFBGA |
Andere namen |
917-EPC2107ENGRTR |
Temperatuur |
-40°C ~ 150°C (TJ) |
montage Type |
Surface Mount |
Vochtgevoeligheidsniveau (MSL) |
1 (Unlimited) |
Loodvrije status / RoHS-status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
16pF @ 50V, 7pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
0.16nC @ 5V, 0.044nC @ 5V |
FET Type |
3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain naar de Bron Voltage (Vdss) |
100V |
gedetailleerde beschrijving |
Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
Current - Continuous Drain (Id) @ 25 ° C |
1.7A, 500mA |