Onderdeel nummer : | FJV4106RMTF |
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Fabrikant / Merk : | AMI Semiconductor / ON Semiconductor |
Beschrijving : | TRANS PREBIAS PNP 200MW SOT23-3 |
RoHs-status : | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 4171 pcs |
Datasheets | 1.FJV4106RMTF.pdf2.FJV4106RMTF.pdf |
Spanning - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
transistor Type | PNP - Pre-Biased |
Leverancier Device Pakket | SOT-23-3 (TO-236) |
Serie | - |
Weerstand - emitterbasis (R2) | 47 kOhms |
Weerstand - basis (R1) | 10 kOhms |
Vermogen - Max | 200mW |
Packaging | Tape & Reel (TR) |
Verpakking / doos | TO-236-3, SC-59, SOT-23-3 |
montage Type | Surface Mount |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Frequentie - Transition | 200MHz |
gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |