Onderdeel nummer : | NSBA123TDP6T5G |
---|---|
Fabrikant / Merk : | AMI Semiconductor / ON Semiconductor |
Beschrijving : | TRANS 2PNP PREBIAS 0.408W SOT963 |
RoHs-status : | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 343809 pcs |
Datasheets | NSBA123TDP6T5G.pdf |
Spanning - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
transistor Type | 2 PNP - Pre-Biased (Dual) |
Leverancier Device Pakket | SOT-963 |
Serie | - |
Weerstand - emitterbasis (R2) | - |
Weerstand - basis (R1) | 2.2 kOhms |
Vermogen - Max | 408mW |
Packaging | Tape & Reel (TR) |
Verpakking / doos | SOT-963 |
montage Type | Surface Mount |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Fabrikant Standaard Levertijd | 14 Weeks |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Frequentie - Transition | - |
gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | NSBA1* |