Onderdeel nummer : | NSBC113EDXV6T1G |
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Fabrikant / Merk : | AMI Semiconductor / ON Semiconductor |
Beschrijving : | TRANS 2NPN PREBIAS 0.5W SOT563 |
RoHs-status : | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 4580 pcs |
Datasheets | NSBC113EDXV6T1G.pdf |
Spanning - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
transistor Type | 2 NPN - Pre-Biased (Dual) |
Leverancier Device Pakket | SOT-563 |
Serie | - |
Weerstand - emitterbasis (R2) | 1 kOhms |
Weerstand - basis (R1) | 1 kOhms |
Vermogen - Max | 500mW |
Packaging | Tape & Reel (TR) |
Verpakking / doos | SOT-563, SOT-666 |
Andere namen | NSBC113EDXV6T1GOSTR |
montage Type | Surface Mount |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Frequentie - Transition | - |
gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | NSBC1* |