Onderdeel nummer : |
NSM21356DW6T1G |
Fabrikant / Merk : |
AMI Semiconductor / ON Semiconductor |
Beschrijving : |
TRANS NPN PREBIAS/PNP SOT363 |
RoHs-status : |
Loodvrij / RoHS-conform |
hoeveelheid beschikbaar |
5633 pcs |
Datasheets |
NSM21356DW6T1G.pdf |
Spanning - Collector Emitter Breakdown (Max) |
50V, 65V |
Vce Saturation (Max) @ Ib, Ic |
250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA |
transistor Type |
1 NPN Pre-Biased, 1 PNP |
Leverancier Device Pakket |
SC-88/SC70-6/SOT-363 |
Serie |
- |
Weerstand - emitterbasis (R2) |
47 kOhms |
Weerstand - basis (R1) |
47 kOhms |
Vermogen - Max |
230mW |
Packaging |
Tape & Reel (TR) |
Verpakking / doos |
6-TSSOP, SC-88, SOT-363 |
montage Type |
Surface Mount |
Vochtgevoeligheidsniveau (MSL) |
1 (Unlimited) |
Loodvrije status / RoHS-status |
Lead free / RoHS Compliant |
Frequentie - Transition |
- |
gedetailleerde beschrijving |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 65V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363 |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 5mA, 10V / 220 @ 2mA, 5V |
Current - Collector Cutoff (Max) |
500nA |
Current - Collector (Ic) (Max) |
100mA |