| Onderdeel nummer : | RN2704JE(TE85L,F) |
|---|---|
| Fabrikant / Merk : | Toshiba Semiconductor and Storage |
| Beschrijving : | TRANS 2PNP PREBIAS 0.1W ESV |
| RoHs-status : | Loodvrij / RoHS-conform |
| hoeveelheid beschikbaar | 335783 pcs |
| Datasheets | RN2704JE(TE85L,F).pdf |
| Spanning - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Leverancier Device Pakket | ESV |
| Serie | - |
| Weerstand - emitterbasis (R2) | 47 kOhms |
| Weerstand - basis (R1) | 47 kOhms |
| Vermogen - Max | 100mW |
| Packaging | Cut Tape (CT) |
| Verpakking / doos | SOT-553 |
| Andere namen | RN2704JE(TE85LF)CT |
| montage Type | Surface Mount |
| Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
| Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
| Frequentie - Transition | 200MHz |
| gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA |
Toshiba Semiconductor and Storage
