Onderdeel nummer : | RN2712JE(TE85L,F) |
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Fabrikant / Merk : | Toshiba Semiconductor and Storage |
Beschrijving : | TRANS 2PNP PREBIAS 0.1W ESV |
RoHs-status : | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 356585 pcs |
Datasheets | RN2712JE(TE85L,F).pdf |
Spanning - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Leverancier Device Pakket | ESV |
Serie | - |
Weerstand - emitterbasis (R2) | - |
Weerstand - basis (R1) | 22 kOhms |
Vermogen - Max | 100mW |
Packaging | Tape & Reel (TR) |
Verpakking / doos | SOT-553 |
Andere namen | RN2712JE(TE85LF)TR |
montage Type | Surface Mount |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Frequentie - Transition | 200MHz |
gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |