| Onderdeel nummer : | RN2910FE,LF(CB |
|---|---|
| Fabrikant / Merk : | Toshiba Semiconductor and Storage |
| Beschrijving : | TRANS 2PNP PREBIAS 0.1W ES6 |
| RoHs-status : | Loodvrij / RoHS-conform |
| hoeveelheid beschikbaar | 1459077 pcs |
| Datasheets | RN2910FE,LF(CB.pdf |
| Spanning - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| transistor Type | 2 PNP - Pre-Biased (Dual) |
| Leverancier Device Pakket | ES6 |
| Serie | - |
| Weerstand - emitterbasis (R2) | - |
| Weerstand - basis (R1) | 4.7 kOhms |
| Vermogen - Max | 100mW |
| Packaging | Tape & Reel (TR) |
| Verpakking / doos | SOT-563, SOT-666 |
| Andere namen | RN2910FE(T5L,F,T) RN2910FE(T5LFT)TR RN2910FE(T5LFT)TR-ND RN2910FE,LF(CT RN2910FELF(CBTR RN2910FELF(CTTR RN2910FELF(CTTR-ND |
| montage Type | Surface Mount |
| Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
| Fabrikant Standaard Levertijd | 16 Weeks |
| Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
| Frequentie - Transition | 200MHz |
| gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA |
Toshiba Semiconductor and Storage
