| Onderdeel nummer : | SCT3120ALGC11 |
|---|---|
| Fabrikant / Merk : | LAPIS Semiconductor |
| Beschrijving : | MOSFET NCH 650V 21A TO247N |
| RoHs-status : | Loodvrij / RoHS-conform |
| hoeveelheid beschikbaar | 5101 pcs |
| Datasheets | 1.SCT3120ALGC11.pdf2.SCT3120ALGC11.pdf |
| VGS (th) (Max) @ Id | 5.6V @ 3.33mA |
| Vgs (Max) | +22V, -4V |
| Technologie | SiCFET (Silicon Carbide) |
| Leverancier Device Pakket | TO-247N |
| Serie | - |
| Rds On (Max) @ Id, VGS | 156 mOhm @ 6.7A, 18V |
| Vermogensverlies (Max) | 103W (Tc) |
| Packaging | Tube |
| Verpakking / doos | TO-247-3 |
| Temperatuur | 175°C (TJ) |
| montage Type | Through Hole |
| Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
| Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
| FET Type | N-Channel |
| FET Feature | - |
| Aandrijfspanning (Max. Rds Aan, Min. Rds Aan) | 18V |
| Drain naar de Bron Voltage (Vdss) | 650V |
| gedetailleerde beschrijving | N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N |
| Current - Continuous Drain (Id) @ 25 ° C | 21A (Tc) |
LAPIS Semiconductor
