| Onderdeel nummer : | SI4922BDY-T1-GE3 |
|---|---|
| Fabrikant / Merk : | Electro-Films (EFI) / Vishay |
| Beschrijving : | MOSFET 2N-CH 30V 8A 8-SOIC |
| RoHs-status : | Loodvrij / RoHS-conform |
| hoeveelheid beschikbaar | 39052 pcs |
| Datasheets | SI4922BDY-T1-GE3.pdf |
| VGS (th) (Max) @ Id | 1.8V @ 250µA |
| Leverancier Device Pakket | 8-SO |
| Serie | TrenchFET® |
| Rds On (Max) @ Id, VGS | 16 mOhm @ 5A, 10V |
| Vermogen - Max | 3.1W |
| Packaging | Tape & Reel (TR) |
| Verpakking / doos | 8-SOIC (0.154", 3.90mm Width) |
| Andere namen | SI4922BDY-T1-GE3-ND SI4922BDY-T1-GE3TR |
| Temperatuur | -55°C ~ 150°C (TJ) |
| montage Type | Surface Mount |
| Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
| Fabrikant Standaard Levertijd | 33 Weeks |
| Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 2070pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain naar de Bron Voltage (Vdss) | 30V |
| gedetailleerde beschrijving | Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SO |
| Current - Continuous Drain (Id) @ 25 ° C | 8A |
| Base Part Number | SI4922 |
