| Onderdeel nummer : | SI5513CDC-T1-GE3 |
|---|---|
| Fabrikant / Merk : | Electro-Films (EFI) / Vishay |
| Beschrijving : | MOSFET N/P-CH 20V 4A 1206-8 |
| RoHs-status : | Loodvrij / RoHS-conform |
| hoeveelheid beschikbaar | 144369 pcs |
| Datasheets | SI5513CDC-T1-GE3.pdf |
| VGS (th) (Max) @ Id | 1.5V @ 250µA |
| Leverancier Device Pakket | 1206-8 ChipFET™ |
| Serie | TrenchFET® |
| Rds On (Max) @ Id, VGS | 55 mOhm @ 4.4A, 4.5V |
| Vermogen - Max | 3.1W |
| Packaging | Tape & Reel (TR) |
| Verpakking / doos | 8-SMD, Flat Lead |
| Andere namen | SI5513CDC-T1-GE3TR SI5513CDCT1GE3 |
| Temperatuur | -55°C ~ 150°C (TJ) |
| montage Type | Surface Mount |
| Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
| Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 285pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 5V |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain naar de Bron Voltage (Vdss) | 20V |
| gedetailleerde beschrijving | Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™ |
| Current - Continuous Drain (Id) @ 25 ° C | 4A, 3.7A |
| Base Part Number | SI5513 |
Electro-Films (EFI) / Vishay
