Onderdeel nummer : | SI5920DC-T1-GE3 |
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Fabrikant / Merk : | Electro-Films (EFI) / Vishay |
Beschrijving : | MOSFET 2N-CH 8V 4A 1206-8 |
RoHs-status : | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 4349 pcs |
Datasheets | SI5920DC-T1-GE3.pdf |
VGS (th) (Max) @ Id | 1V @ 250µA |
Leverancier Device Pakket | 1206-8 ChipFET™ |
Serie | TrenchFET® |
Rds On (Max) @ Id, VGS | 32 mOhm @ 6.8A, 4.5V |
Vermogen - Max | 3.12W |
Packaging | Tape & Reel (TR) |
Verpakking / doos | 8-SMD, Flat Lead |
Andere namen | SI5920DC-T1-GE3TR |
Temperatuur | -55°C ~ 150°C (TJ) |
montage Type | Surface Mount |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 4V |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain naar de Bron Voltage (Vdss) | 8V |
gedetailleerde beschrijving | Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surface Mount 1206-8 ChipFET™ |
Current - Continuous Drain (Id) @ 25 ° C | 4A |
Base Part Number | SI5920 |