| Onderdeel nummer : | SIHP28N65E-GE3 |
|---|---|
| Fabrikant / Merk : | Electro-Films (EFI) / Vishay |
| Beschrijving : | MOSFET N-CH 650V 29A TO220AB |
| RoHs-status : | |
| hoeveelheid beschikbaar | 10695 pcs |
| Datasheets | SIHP28N65E-GE3.pdf |
| VGS (th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technologie | MOSFET (Metal Oxide) |
| Leverancier Device Pakket | TO-220AB |
| Serie | - |
| Rds On (Max) @ Id, VGS | 112 mOhm @ 14A, 10V |
| Vermogensverlies (Max) | 250W (Tc) |
| Packaging | Tube |
| Verpakking / doos | TO-220-3 |
| Temperatuur | -55°C ~ 150°C (TJ) |
| montage Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 3405pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Aandrijfspanning (Max. Rds Aan, Min. Rds Aan) | 10V |
| Drain naar de Bron Voltage (Vdss) | 650V |
| gedetailleerde beschrijving | N-Channel 650V 29A (Tc) 250W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25 ° C | 29A (Tc) |
Electro-Films (EFI) / Vishay
