| Onderdeel nummer : | TJ30S06M3L(T6L1,NQ |
|---|---|
| Fabrikant / Merk : | Toshiba Semiconductor and Storage |
| Beschrijving : | MOSFET P-CH 60V 30A DPAK-3 |
| RoHs-status : | Loodvrij / RoHS-conform |
| hoeveelheid beschikbaar | 43346 pcs |
| Datasheets | 1.TJ30S06M3L(T6L1,NQ.pdf2.TJ30S06M3L(T6L1,NQ.pdf |
| VGS (th) (Max) @ Id | 3V @ 1mA |
| Vgs (Max) | +10V, -20V |
| Technologie | MOSFET (Metal Oxide) |
| Leverancier Device Pakket | DPAK+ |
| Serie | U-MOSVI |
| Rds On (Max) @ Id, VGS | 21.8 mOhm @ 15A, 10V |
| Vermogensverlies (Max) | 68W (Tc) |
| Packaging | Tape & Reel (TR) |
| Verpakking / doos | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andere namen | TJ30S06M3L(T6L1NQ TJ30S06M3LT6L1NQ |
| Temperatuur | 175°C (TJ) |
| montage Type | Surface Mount |
| Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
| Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| FET Type | P-Channel |
| FET Feature | - |
| Aandrijfspanning (Max. Rds Aan, Min. Rds Aan) | 6V, 10V |
| Drain naar de Bron Voltage (Vdss) | 60V |
| gedetailleerde beschrijving | P-Channel 60V 30A (Ta) 68W (Tc) Surface Mount DPAK+ |
| Current - Continuous Drain (Id) @ 25 ° C | 30A (Ta) |
