| Onderdeel nummer : | RN1909FE(TE85L,F) |
|---|---|
| Fabrikant / Merk : | Toshiba Semiconductor and Storage |
| Beschrijving : | TRANS 2NPN PREBIAS 0.1W ES6 |
| RoHs-status : | Loodvrij / RoHS-conform |
| hoeveelheid beschikbaar | 390171 pcs |
| Datasheets | RN1909FE(TE85L,F).pdf |
| Spanning - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| transistor Type | 2 NPN - Pre-Biased (Dual) |
| Leverancier Device Pakket | ES6 |
| Serie | - |
| Weerstand - emitterbasis (R2) | 22 kOhms |
| Weerstand - basis (R1) | 47 kOhms |
| Vermogen - Max | 100mW |
| Packaging | Cut Tape (CT) |
| Verpakking / doos | SOT-563, SOT-666 |
| Andere namen | RN1909FE(TE85LF)CT |
| montage Type | Surface Mount |
| Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
| Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
| Frequentie - Transition | 250MHz |
| gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA |
Toshiba Semiconductor and Storage
