Onderdeel nummer : | RN1911(T5L,F,T) |
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Fabrikant / Merk : | Toshiba Semiconductor and Storage |
Beschrijving : | TRANS 2NPN PREBIAS 0.1W US6 |
RoHs-status : | Loodvrij / RoHS-conform |
hoeveelheid beschikbaar | 5190 pcs |
Datasheets | RN1911(T5L,F,T).pdf |
Spanning - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
transistor Type | 2 NPN - Pre-Biased (Dual) |
Leverancier Device Pakket | US6 |
Serie | - |
Weerstand - emitterbasis (R2) | - |
Weerstand - basis (R1) | 4.7 kOhms |
Vermogen - Max | 100mW |
Packaging | Tape & Reel (TR) |
Verpakking / doos | 6-TSSOP, SC-88, SOT-363 |
Andere namen | RN1911(T5LFT)TR |
montage Type | Surface Mount |
Vochtgevoeligheidsniveau (MSL) | 1 (Unlimited) |
Loodvrije status / RoHS-status | Lead free / RoHS Compliant |
Frequentie - Transition | 250MHz |
gedetailleerde beschrijving | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount US6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |